Publications — Prof. Naresh Padha

Optimized ALD-ZnO thin films for high-performance 12 μm pixel microbolometers: fabrication, simulation, and design strategies for infrared sensing.
ACS Applied Electronic Materials — Sep. 2025
DOI: 10.1021/acsaelm.5c01235
Authors: Bhavya Padha, Zahoor Ahmed, Naresh Padha, Devendra Singh Rawal, Isha Yadav, Sandeep Arya. Indexed: SCOPUS, SCIE. IF: 4.7.

Transient response of low-temperature ALD-grown ZnO thin film-based p-i-n UV detector.
Optical Materials — June 2025
DOI: 10.1016/j.optmat.2025.117264
Authors: Bhavya Padha, Zahoor Ahmed, Shankar Dutta, Akhilesh Pandey, Naresh Padha, Isha Yadav, Sandeep Arya. Indexed: SCOPUS, SCIE. IF: 4.2.

Dynamics of ALD grown ZnO thin films with varying thicknesses and substrate temperatures for optoelectronic applications.
Optical and Quantum Electronics — May 2025
DOI: 10.1007/s11082-025-08255-4
Authors: Zahoor Ahmed, Naresh Padha, Bhavya Padha, Zakir Hussain, Dimple Singh. Indexed: SCOPUS, SCIE. IF: 4.0.

Temperature dependent growth and characterizations of Cu(In1-xGax)Se2 thin films for photovoltaic applications.
Journal of Materials Science: Materials in Electronics — March 2025
DOI: 10.1007/s10854-025-14817-9
Authors: Shafiq Ahmed, Naresh Padha, Zakir Hussain, Shammi Kumar, Zahoor Ahmed, Dimple Singh. Indexed: SCOPUS, Web of Science (SCIE). IF: 2.8.

Growth of nanostructured ZnTe thin films through annealing of the MSELD-prepared stack of precursors for photonic applications.
Chemical Physics Impact — January 2025
DOI: 10.1016/j.chphi.2025.100837
Authors: Dimple Singh, Naresh Padha, Zakir Hussain, Zahoor Ahmed, Padma Dolma. Indexed: SCOPUS/ESCI. IF: 4.3.

Ultrasensitive NO₂ gas detection using ALD-grown ZnO–SiO₂/Si thin film-based UV sensors.
Journal of Alloys and Compounds — November 2024
DOI: 10.1016/j.jallcom.2024.177673
Authors: Bhavya Padha, Zahoor Ahmed, Shankar Dutta, Akhilesh Pandey, Naresh Padha, Monika Tomar, Anjali Sharma, Isha Yadav, Sandeep Arya. IF: 6.4.

Development of nanostructured Cu₃SnS₄ thin films through annealing of the stack of precursors for photonic applications.
Optical and Quantum Electronics — November 2024
DOI: 10.1007/s11082-024-07709-5
Authors: Zakir Hussain, Naresh Padha, Arun Banotra. IF: 4.0.

Effect of change in substrate temperature, layer thickness on the behaviour of n-CdS thin films and formation of their diodes and photovoltaic cell.
Thin Solid Films — August 2024
DOI: 10.1016/j.tsf.2024.140459
Authors: Padma Dolma, Naresh Padha, Arun Banotra, Rajesh Niranjan, Zakir Hussain. IF: 2.0.

Growth of nano-polycrystalline CuIn₁₋ₓAlₓSe₂ thin films and photovoltaic cell formation.
Results in Surfaces and Interfaces — January 2024
DOI: 10.1016/j.rsurfi.2024.100186
Authors: Rajesh Niranjan & Naresh Padha. IF: 4.4.

Processing of nanocrystalline thin films of selenium and formation of FTO/p-Se/n-CdS/In heterojunctions for photovoltaic response.
Results in Optics — September 2023
DOI: 10.1016/j.rio.2023.100533
Authors: Rajesh Niranjan & Naresh Padha. IF: 3.0.

A Two-step Method to Grow ZnSe Thin Films and To Study Their Characteristics.
Indian Journal of Pure & Applied Physics — Sep 2023
DOI: 10.56042/ijpap.v61i9.3209
Authors: Zakir Hussain, Naresh Padha, Shafiq Ahmad, Padma Dolma. IF: 0.846.

Effect of substrate and annealing temperature on the physical properties of the thin films of SnSe₂–SnSe alloy.
Optical Materials — Dec 2022
DOI: 10.1016/j.optmat.2022.113078
Authors: Shammi Kumar, Arun Banotra, Naresh Padha, Shafiq Ahmed. IF: 3.8.

Impact of annealing on the growth dynamics of indium sulphide buffer layers.
Journal of Materials Research & Technology — Sep 2022
DOI: 10.1016/j.jmrt.2022.09.094
Authors: Shafiq Ahmed, Naresh Padha, Arun Banotra, Ajit Khosla. IF: 6.4.

Sequentially evaporated layer deposition stack of CuxS thin films for photonics applications.
Journal of Materials Research & Technology — Aug 2022
DOI: 10.1016/j.jmrt.2022.08.097
Authors: Padma Dolma, Arun Banotra, Naresh Padha, Ajit Khosla. IF: 6.4.

Growth Dynamics of SnSe Thin Films on Annealing of Precursor Layers Stacked by Multisource Sequential Elemental Layer Deposition
Integrated Ferroelectrics — June 2022
DOI: 10.1080/10584587.2022.2102805
Authors: Arun Banotra, Naresh Padha. IF: 0.7.

Organic coordinated SnS and SnS₁₋ₓSeₓ crystals: synthesis, characteristics and optical behaviour for photonic applications.
Optical and Quantum Electronics — May 2022
DOI: 10.1007/s11082-022-03739-z
Authors: Arun Banotra & Naresh Padha. IF: 3.0.

A two step method to obtain the 2D layers of SnSe₂ single phase and study its physical characteristics for photovoltaic and photo converter devices.
Applied Physics A — Oct 2021
DOI: 10.1007/s00339-021-04992-x
Authors: Naresh Padha & Shammi Kumar. IF: 2.7.

MSELD SnS₁₋ₓSeₓ alloy thin films towards efficient structural and bandgap engineering for photonic devices.
Journal of Materials Research — Sep 2021
DOI: 10.1557/s43578-021-00394-0
Authors: Arun Banotra & Naresh Padha. IF: 2.7.

Growth of γ-In₂Se₃ monolayer from multifaceted InₓSeᵧ thin films via annealing and study of its physical properties.
Materials Chemistry & Physics — Sep 2021
DOI: 10.1016/j.matchemphys.2020.123823
Authors: Rajesh Niranjan & Naresh Padha. IF: 4.6.

SnₓSᵧ MSELD stack thin films: Processing, characteristics and devices for photonic applications.
Solar Energy — Oct 2020
DOI: 10.1016/j.solener.2020.10.005
Authors: Arun Banotra & Naresh Padha. IF: 6.7.

Effect of CuIn₁₋ₓAlₓSe₂ (CIAS) thin film thickness and diode annealing temperature on Al/p-CIAS Schottky diode.
Bulletin of Materials Science — Oct 2020
DOI: 10.1007/s12034-020-02245-w
Authors: Usha Parihar, Jaymin Ray, C J Panchal & Naresh Padha. IF: 1.8.

Development of CuInSe₂ thin films by SELD method for photovoltaic absorber layer application.
Journal of Materials Science: Materials in Electronics — Jan 2020
Authors: Rajesh Niranjan, Arun Banotra & Naresh Padha. IF: 2.8.

Development of SnS nanocrystals and tuning of parameters for use as spectral selective photoabsorbers.
Journal of Crystal Growth — Jan 2020
DOI: 10.1016/j.jcrysgro.2019.125460
Authors: Arun Banotra & Naresh Padha. IF: 1.8.

Facile growth of SnS and SnS₀.₄Se₀.₆ thin films as an absorber layer in the solar cell structure.
Materials Today: Proceedings — Dec 2019
Authors: Arun Banotra & Naresh Padha. IF: 3.2.

SnTeₓSe₁₋ₓ alloy: An effective alternate to SnSe nanocrystalline thin films for optoelectronic applications.
Journal of Electronic Materials — Apr 2019
DOI: 10.1007/s11664-019-07202-w
Authors: Anjali Devi, Arun Banotra, Shiv Kumar, Ashok K. Kapoor, Naresh Padha. IF: 2.1.

Development of SnS₀.₄Se₀.₆ Ternary Alloy on Annealing of Thermally Deposited Films.
Journal of Electronic Materials — Oct 2019
DOI: 10.1007/s11664-018-6710-y
Authors: Arun Banotra & Naresh Padha. IF: 2.1.

Impact of additional sulphur on structure, morphology and optical properties of SnS thin films by thermal evaporation.
AIP Conference Proceedings — May 2018
Authors: Arun Banotra, Naresh Padha, Shiv Kumar, Ashok K. Kapoor.

Structural and optical properties of tin disulphide thin films grown by flash evaporation.
AIP Conference Proceedings — Apr 2018
Authors: Arun Banotra & Naresh Padha.

Effect of substrate temperature on the characteristics of mixed phase SnTeₓSe₁₋ₓ (x = 0.32) thin films.
Materials Research Express — Nov 2017
DOI: 10.1088/2053-1591/aa98b0
Authors: Naresh Padha, Anjali Devi, Arun Banotra, Shiv Kumar, Ashok Kumar Kapoor. IF: 2.3.

Effect of annealing on physical characteristics of the vacuum evaporated mixed phase SnₓSᵧ thin films.
Materials Research Express — Nov 2017
DOI: 10.1088/2053-1591/aa982e
Authors: Arun Banotra & Naresh Padha. IF: 2.3.

Potential of Sm³⁺ doped LiSrVO₄ nanophosphor to fill amber gap in LEDs.
Physica B — July 2017
Authors: P. Biswas, Vinay Kumar, Vishal Sharma, A.K. Bedyal, Naresh Padha, H.C. Swart. IF: 2.8.

Synthesis, structural and luminescence studies of LiSrVO₄:Sm³⁺ nanophosphor to fill amber gap in LEDs under n-UV excitation.
Journal of Materials Science: Materials in Electronics — Jan 2017
Authors: P. Biswas, Vinay Kumar, Naresh Padha, H.C. Swart. IF: 2.8.

Influence of temperature on Al/p-CuInAlSe₂ thin-film Schottky diodes.
Applied Physics A — May 2016
DOI: 10.1007/s00339-016-0105-9
Authors: Usha Parihar, Jaymin Ray, C. J. Panchal, Naresh Padha. IF: 2.7.

Synthesis and crystal structure of [chlorobis(triphenylphosphino)(p-chlorobenzaldehyde thiosemicarbazone)] copper(I) complex.
Journal of Chemical Sciences — Jan 2016
Authors: Ashiq Khan, Poonam Sharma, Rajnikant, Vivek K. Gupta, Naresh Padha, Rekha Sharma. IF: 1.7.

Growth and Characterization of Tin Diselenide Telluride (SnSe₂Te) Thin Films.
Invertis Journal of Renewable Energy — 2014
Authors: (ResearchGate entry). IF: N/A.

Fabrication and Characterization of SnSeTe Thin Films and their Schottky diodes.
Invertis Journal of Science and Technology — 2014
Authors: (Invertis University). IF: N/A.

Influence of Substrate Temperature on Structural, Optical, and Electrical Properties of Flash Evaporated CuIn₀.₈₁Al₀.₁₉Se₂ Thin Films.
Materials Chemistry & Physics — Apr 2013
DOI: 10.1016/j.matchemphys.2013.01.034
Authors: Usha Parihar, K. Sreenivas, J.R. Ray, C.J. Panchal, N. Padha, Bharati Rehani. IF: 4.6.

Fabrication and Characterisation of Al/p-CuInAlSe₂ thin Film Schottky Diodes.
Journal of Nano-Electronic Physics — May 2013
Authors: Usha Parihar, N. Padha, C. J. Panchal.

Effect of Film Thickness and Annealing on the Structural and Optical Properties of CuInAlSe₂ Thin Films.
Proceedings — 2013
Authors: U. Parihar, N. Padha, J.R. Ray, M.S. Desai, C.J. Panchal, P.K. Mehta.

Effect of Film Thickness on Optical Properties of Tin Selenide Thin Films Prepared by Thermal Evaporation for Photovoltaic Applications.
American Journal of Materials Science — Feb 2012
Authors: (see CV). IF: 0.765.

Growth, Structural and Optical Properties of the Thermally Evaporated Tin Diselenide (SnSe₂) Thin Films.
Journal of Nano-Electronic Physics — Jun 2011
Authors: R. Sachdeva, M. Sharma, A. Devi, U. Parihar, N. Kumar, N. Padha*, C.J. Panchal.

Structural, optical and electrical characterization of Tin Selenide thin films deposited at room temperature using thermal evaporation method.
Journal of Nano-Electronic Physics — Jan 2011
Authors: N. Kumar, V. Sharma, Usha Parihar, Ramesh Sachdeva, Naresh Padha, Chetan Panchal.

Impact of annealing on CuInSe₂ thin films and its Schottky interface.
Journal of Nano-Electronic Physics — Jan 2011
Authors: U. Parihar, J. R. Ray, N. Kumar, R. Sachdeva, N. Padha, C. J. Panchal.

Barrier inhomogeneities of Al/p-In₂Te₃ thin film Schottky diodes.
Journal of Nano-Electronic Physics — Nov 2011
Authors: R. R. Desai, D. Lakshminarayana, R. Sachdeva, P. B. Patel, C. J. Panchal, M. S. Desai, N. Padha.

Current transport behaviour of Au/n-GaAs Schottky diodes grown on Ge substrate with different epitaxial layer thickness over a wide temperature range.
Journal of Nano-Electronic Physics — Feb 2011
Authors: N. Padha, R. Sachdeva, R. Sihotra, S.B. Krupanidhi.

A Novel Trench-Gate Floating Islands (FLI) Power MOSFET (TG-FLIMOSFET): A Two-Dimensional Simulation Study.
Microelectronic Engineering — Nov 2011
Authors: Rakesh Vaid, Naresh Padha. IF: 2.3.

ChemInform Abstract: Anomalin. A Dihydropyanocoumarin Derivative from the Plant Lingusticum elatumd.
Cheminfo (Wiley) — Apr 2010
Authors: N. Padha, K. N. Goswami, V. S. Yadava, M. Nethaji.

Influence of the substrate temperature on the structural, optical and electrical properties of tin selenide thin films deposited by thermal evaporation method.
Cryst. Res. Technol. — Jan 2010
Authors: N. Kumar, V. Sharma, N. Padha, N. M. Shah, M. S. Desai, C. J. Panchal, I. Yu. Protsenko. IF: 1.5.

Optical and Electrical Properties of the Copper Indium Aluminium Diselenide (CIAS) Thin Films for thin film solar cell application.
Photovoltaic Technical Conference — 2010
Authors: Chetan Panchal, Naresh Padha.

Study of forward I–V characteristics of some Schottky Diodes with varying doping concentrations over a wide temperature range.
XVth International Workshop on Physics of Semiconductor Devices (IWPSD-2009) — 2009
Authors: Naresh Padha et al.

Anomalous Electrical Transport at Non-Ideal Au/Epitaxial n-GaAs Schottky Junctions on n⁺-Ge Substrates at Low Temperatures.
The African Review of Physics — 2009
Authors: Shyam Hardikar, M.K. Hudait, P. Modak, Saluru B Krupanidhi, Naresh Padha.

Barrier inhomogeneities in Au/CdSe thin film Schottky diodes.
Semicond. Sci. Technol. — Dec 2008
DOI: 10.1088/0268-1242/23/1/015003
Authors: C.J. Panchal, M.S Desai, V.A. Kheraj, K.J. Patel, N. Padha. IF: 1.9.

A Novel CMOS Compatible LDMOS for Automotive Applications.
Int. Journal of Active and Passive Electronic Devices (JAPED-USA) — 2008
Authors: Rakesh Vaid, Naresh Padha.

Novel FLI/ODBR based LDMOSFET: A 2-D Simulation study.
Proc. IWPSD-2007 (IEEE) — Mar 2008
Authors: Rakesh Vaid, Asgar Hussain, Amit Trikha, Sanjeeva Bhushan, Jaspreet Singh, Roshan Lal, Naresh Padha.

Factors Limiting the Device Performance in Power FLIMOSFET: 2-D Simulation Study.
ICEE — Aug 2007
Authors: Rakesh Vaid, Naresh Padha.

Process Flow Mechanism for a Novel Trench Gate FLIMOSFET.
The African Review of Physics — 2009 (Proc. paper)
Authors: R. Vaid, R. Gupta, N. Padha.

Numerical Analysis of a Trench Gate FLIMOSFET with No Quasi-Saturation, Improved Specific On-Resistance and Better Synchronous Rectifying Characteristics.
Proc. IEEE MIEL-2006 — 2006
Authors: Rakesh Vaid, Naresh Padha.

Investigation of a power FLIMOSFET based on two-dimensional numerical simulations.
Indian Journal of Engineering and Material Sciences — 2006
Authors: Rakesh Vaid, Naresh Padha. IF: 0.9.

Degradation factors on the device performance in power FLIMOSFET.
Proc. 2nd Science Congress (University of Kashmir) — 2006

A Novel Trench Gate FLIMOSFET with no Quasi-Saturation and Low On-Resistance.
Conference on Electronic & Photonic Materials and Devices (EPMDS-2006) — 2006

Optimization of Trench Geometry for a Power TG-FLIMOSFET.
NCETET-2006 — 2006

A Power MOSFET with vertical floating islands: 2D Simulation Study.
Int. Conference on VLSI design & Embedded Systems — 2005

Comparative study of Power MOSFET device structures.
Indian Journal of Pure and Applied Physics — 2005

Novel power VDMOSFET structure with vertical floating islands and trench gate.
Indian Journal of Pure & Applied Physics / NOPR handle — 2005

A novel CMOS compatible LDMOS based on (FLI) & (ODBR) MOSFET concept.
Proc. IWPSD-2005 — 2005

Floating islands dependence on the power performance in power FLIMOSFET: 2-D simulation study.
National conference G.D.C Bemina, Srinagar — 2005

The effect of drift region doping in power VDMOSFETs with vertical floating islands (FLIMOSFET).
Modern trends in electronics & communication systems (MTECS-2005) — 2005

Modelling power VDMOSFET Transistors: Device physics and Equivalent circuit model with parameter extraction.
Indian Journal of Pure and Applied Physics — 2004

Styrene Acrylonitrile (SAN) Polymeric Waveguides.
Optics & Laser Technology — 2003
DOI reference in CV. IF: ~5.0.

Study of dark and photoconductivity of Sb-doped CuInSe₂ thin films.
Indian Journal of Pure and Applied Physics — 2003

Electrical transport characteristics of Au/n-GaAs Schottky barrier diodes on N⁺ Ge Substrate for I–V–T Measurements.
Proc. Advances in Ferro-electronics and Dielectrics — 2003

Current–Voltage characteristics of highly doped Au/n-GaAs Schottky diodes in a wide temperature range.
Proc. Advances in Ferro-electronics and Dielectrics — 2003

Effect of Sb-doping on dark and photoconductivity of CuInSe₂ thin films.
Proc. PV in Europe — Oct 2002

Effect of interfacial layer on the forward current–voltage characteristics of Au/n-Si and Ni/n-Si Schottky Diodes.
Proc. XI-International Workshop on The Physics of Semiconductor Devices (IWPSD) — 2001

Effect of barrier inhomogeneities on heavily doped Au/n-GaAs Schottky Diodes.
Proc. XI-IWPSD — 2001

Ageing and annealing effect in polystyrene waveguides.
BBOFCT — 2001

Anomalous current transport in Au/low-doped n-GaAs Schottky Barrier Diodes at low Temperatures.
Applied Physics A — Jan 1999
DOI: 10.1007/s003390050852

Quantum Hall Effect and its importance — Characterization of semiconducting materials and Device applications.
Proceedings — 1998

Anomalin: A Dihydropyrano coumarin derivative from the plant Linusticum Elatum.
Acta Cryst. C — 1995
DOI: 10.1107/S0108270195008341

Crystal and Molecular Structure of Tosyl Pyrrolidile 2 Methanol.
Crystal Research & Technology — 1995

Crystal structure of a Furo-[3,2-g]-[1]-Benzopyran-7-one Derivative.
Crystal Research & Technology — 1995

Crystal Structure of a Dehydroabietate Derivative.
Crystal Research & Technology — 1995

Growth and Characterization of Tin Diselenide Telluride (SnSe₂Te) Thin Films — (earlier items recorded).
1994–1995 entries — various crystallography & materials papers.

Crystal and Molecular Structure of (22R) 2b,3b,4,20,25 Hexahydroxy Cholest 7 en 6 one.
Zeitschrift für Kristallographie — 1994